[WeB2] Thin Film Growth of Oxides

10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[WeB2-02] ALD of Epitaxial (002) κ-Ga₂O₃ Thin Films on c-Plane Sapphire

〇Andy Séguret^1,2, Ilyass Jellal¹, Matthieu Weber¹, Hervé Roussel¹, Isabelle Gelard¹, Hanako Okuno³, Laetitia Rapenne¹, Eirini Sarigiannidou¹, Eva Monroy², Vincent Consonni¹ (1. Univ. Grenoble Alpes, CNRS, Grenoble INP, LMGP (France), 2. Univ. Grenoble-Alpes, CEA, Grenoble INP, IRIG, PHELIQS (France), 3. Univ. Grenoble-Alpes, CEA, Grenoble INP, IRIG, MEM (France))

Ga₂O₃ thin films were deposited on c-plane sapphire using thermal Atomic Layer Deposition, at temperatures ranging from 250 to 400 °C. XPS measurements confirm the films grown are stoichiometric with low carbon contamination. At 350 °C, 16 nm thin films show full crystallization in the κ-Ga₂O₃ phase and are (002)-oriented. The films display a high crystalline quality, with a 0.1° linewidth for the ω-scan of the (004) κ-Ga₂O₃ reflection. In-plane XRD and TEM measurements allow to confirm the epitaxial nature of the film, as well as the epitaxial relationships between (002) κ-Ga₂O₃ and c-plane sapphire. All films have a sub-nm surface roughness, thanks to the high conformity of the ALD method.