[4] Session 4 (D6. Carbon & Related Materials)

4:30 PM - 5:00 PM JST(7:30 AM - 8:00 AM UTC)

[4-02] [Invited] Enhanced channel mobility of hydrogen-terminated diamond field-effect transistors utilizing a hexagonal boron nitride gate insulator

*Yosuke Sasama¹ (1. NIMS (Japan))

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