Presentation Information
[P1-14]Electroluminescence properties of InGaAs quantum dot light-emitting diodes with different stacking number of quantum dot layers
*Itsu Tanaka1, Daiki Mineyama1, Kohei Etou1, Ayano Morita1, Hiroto Kise1, Junichi Takayama1, Akihiro Murayama1, Satoshi Hiura1 (1. Hokkaido Univ. (Japan))