Presentation Information
[P1-15]High tunneling electroresistance ratio of TiS2/HfZrO2/TiN ferroelectric tunnel junctions with an Al2O3 interfacial layer
*Jun-Kai Lai1, Kuan-Lin Chen1, Chen Yang1, Jer-Chyi Wang1,2,3 (1. Chang Gung Univ. (Taiwan), 2. Chang Gung Memorial Hospital (Taiwan), 3.Ming Chi Univ. of Tech. (Taiwan))