Presentation Information
[P1-38]Improvement of channel mobility in diamond MOSFET fabricated using surface planarization based on carbon-solid-solution into Ni
*Tsubasa Yoshimoto1, Tsubasa Kano1, Kai Sato1, Kimiyoshi Ichikawa1, Kan Hayashi1, Taro Yoshikawa1, Takao Inokuma1, Satoshi Yamasaki1, Norio Tokuda1, Tsubasa Matsumoto1 (1. Kanazawa Univ. (Japan))