[P1] Poster Session 1

[P1-62] In-situ TEM study of MoS₂ field-effect transistors using a sharp electron probe gate

*Limi Chen¹, Chunmeng Liu¹, Fayong Liu¹, Kareekunnan Afsal¹, Hiroshi Mizuta¹, Yoshifumi Oshima¹ (1. JAIST (Japan))

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