Presentation Information

[P2-12]Diamond MOS structure with SiO2/Al2O3 bilayer gate insulator

*Ryuichi Nakagawa1, Taichi Saito1, Kai Sato1, Tsubasa Matsumoto1, Norio Tokuda1, Takeshi Kawae1 (1. Kanazawa Univ. (Japan))

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