Presentation Information
[P2-25]Interstitial point defect-induced gap states in GaAs and the STM characterization using first-principles methods
*Dhonny Palingayan Bacuyag1, Tien Quang Nguyen2, Melanie David3, Masahiko Tani4, Mary Clare Escaño4 (1. Our Lady of Fatima Univ. (Philippines), 2. Shinshu Univ. (Japan), 3. De La Salle Univ. (Philippines), 4. Univ. of Fukui (Japan))