Presentation Information
[P2-54]Dislocation behavior near seeding interface in <110>-oriented CZ-Si single crystals
*Hisashi Matsumura1,2, Hiroyuki Saito1, Rintaro To2, Hiroki Tsukada2, Shoma Tsukada2, Takeshi Hoshikawa2, Toshinori Taishi2 (1. GlobalWafers Japan Co., Ltd. (Japan), 2. Shinshu Univ. (Japan))