[IL] Special Lectures on Nitride and Oxide Based Wide Bandgap Semiconductor Devices | EM-NANO2025

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Session Details

Special Lecture

[IL]Special Lectures on Nitride and Oxide Based Wide Bandgap Semiconductor Devices

Fri. Jun 13, 2025 9:00 AM - 10:30 AM JST
Fri. Jun 13, 2025 12:00 AM - 1:30 AM UTC

Main Hall(8th Floor)

Chair: Joel T. Asubar (Univ. of Fukui)

9:00 AM - 9:30 AM JST(12:00 AM - 12:30 AM UTC)

[IL1][Special Lecture1] Nitride and oxide based wide bandgap semiconductor devices

To be announced

9:30 AM - 10:00 AM JST(12:30 AM - 1:00 AM UTC)

[IL2][Special Lecture2] High-frequency performance of AlGaN/GaN HEMTs with high-Al content: A theoretical study

Masaaki Kuzuhara (Kwansei Gakuin Univ. (Japan))

10:00 AM - 10:30 AM JST(1:00 AM - 1:30 AM UTC)

[IL3][Special Lecture3] Heteroepitaxy of Ga₂O₃ films using liquid-injection MOCVD: Impact of hydrogen annealing on transport properties of MOSFETs

Milan Ťapajna¹, Fridrich Egyenes¹, Fedor Hrubišák¹, Kristína Hušeková¹, Edmund Dobročka¹, Peter Nádaždy¹, Alica Rosová¹, Filip Gucmann¹ (1. Slovak Academy of Sci. (Slovakia))

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