[C-10] 電子デバイス

9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[C-10-01] (Invited Lecture) Fabrication and characterization of GaN HBTs with a quaternary n-AlGaInN emitter and a GaInN base

○Masaya Takimoto¹, Akira Mase¹, Tomoki Kojima¹, Ryosei Inoue¹, Takashi Egawa¹, Makoto Miyoshi¹ (1. Nagoya Institute of Technology)

Keywords:

GaN-HBTs,AlGaInN,p-GaInN,MOCVD