The Institute of Electronics, Information and Communication Engineers General Conference
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Presentation Information

9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[C-10-01](Invited Lecture) Fabrication and characterization of GaN HBTs with a quaternary n-AlGaInN emitter and a GaInN base

○Masaya Takimoto1, Akira Mase1, Tomoki Kojima1, Ryosei Inoue1, Takashi Egawa1, Makoto Miyoshi1 (1. Nagoya Institute of Technology)

Keywords:

GaN-HBTs,AlGaInN,p-GaInN,MOCVD

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