Presentation Information

[C-2A-14]Study on AlGaN/GaN Dual-Gate HEMTs for Terahertz Band Power Amplifier Application

○Hidemasa Takahashi1, Ryutaro Makisako1, Yuji Ando1, Akio Wakejima2, Jun Suda1 (1. Nagoya Univ., 2. NITech)

Keywords:

GaN,HEMT