The Institute of Electronics, Information and Communication Engineers General Conference
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Session Details

一般セッションOpen Session : General Session

[C-2A]マイクロ波 A

Thu. Mar 7, 2024 9:30 AM - 12:15 PM JST
Thu. Mar 7, 2024 12:30 AM - 3:15 AM UTC
School of Engineering　109(HIROSHIMA UNIVERSITY Higashi-Hiroshima campus)
Chair:Nishikawa Kenjiro, Koji MATSUNAGA
9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[C-2A-12]D-band Power Amplifier MMIC Using 0.1-μm GaAs pHEMT Technology

○Masaharu Ito1, Tatsuya Soma1, Yasushi Wada1 (1. NEC)
9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[C-2A-13]W-Band Cascode GaAs Power Amplifier 2

○Eiji Suematsu1, Shinji Hara1, Keiichi Sakuno1 (1. Nagoya University)
10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[C-2A-14]Study on AlGaN/GaN Dual-Gate HEMTs for Terahertz Band Power Amplifier Application

○Hidemasa Takahashi1, Ryutaro Makisako1, Yuji Ando1, Akio Wakejima2, Jun Suda1 (1. Nagoya Univ., 2. NITech)
10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)

[C-2A-15]A study of fmax-enhancement utilizing the standing-wave controlled structure

○Shinji Hara1, Keiichi Sakuno1, Eiji Suematsu1 (1. Nagoya University)
10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)

[C-2A-16]Temperature Characteristics Measurement of Hydrogen-terminated Diamond FET

○Tomoyuki Furuichi1, Fumito Karasawa1, Hiroyuki Kawashima2, Tomoko Wakai2, Tadashi Masumura3, Takahiro Yamaguchi2, Junichi Kaneko3, Hitoshi Umezawa2, Noriharu Suematsu1 (1. Tohoku University, 2. Ookuma Diamond Device Co., Ltd., 3. Hokkaido University)
10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

Break time

11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[C-2A-17]0.9-4.0 GHz Reactively Matched 30 W GaN MMIC High Efficiency Power Amplifier

○Hirotaka Sato1, Jun Kamioka1, Shinichi Miwa1, Yoshitaka Kamo1, Shintaro Shinjo1 (1. Mitsubishi Electric Corporation)
11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[C-2A-18]Ka-band High Efficiency 24W GaN Power Amplifier MMIC for a W-band GaN Transmitter Module with a Triple-Multiplier for Beyond 5G

○Keigo Nakatani1, Yoshifumi Kawamura1, Takuma Trii1, Shinpei Yamashita1, Akihito Hirai1, Koji Yamanaka1 (1. Mitsubishi Electric Corporation)
11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[C-2A-19]Riemann Pump RF-Power DAC with Novel GaN HEMT Cell Utilizing Charge Reuse Transistor Control Mechanism

○Yuta Fuchibe1, Shuichi Sakata1, Yuji Komatsuzaki1, Shintaro Shinjo1 (1. Mitsubishi Electric Corp.)
11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)Career Explorer

[C-2A-20]Experimental evaluation of digital pre-distortion compensation for dual-input GaN amplifier

○Shinro Yatsuda1, Ayano Yano1, Rikito Matsuo1, Takana Kaho1, Shuichi Sakata2, Yuji Komatsuzaki2, Koji Ymamanaka2 (1. Shonan Institute of Technology, 2. Mitsubishi Electric Corporation)
12:00 PM - 12:15 PM JST(3:00 AM - 3:15 AM UTC)

[C-2A-21]On the Compensation Method of FET Parasitic Capacitance in Class-E Amplifiers

○Ritsuki Takahashi1, Shinichi Tanaka1,2 (1. Graduate School of Science and Engineering, Shibaura Inst. of Tech, 2. SIT International Research Center for Green Electronics)
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