Presentation Information
[B-20-13]5.8 GHz band low power rectenna with low-threshold voltage GaAs E-pHEMT GADs
◎Shotaro Machida1, Taiki Hirase1, Yuya Hirose1, Gaku Kato2, Takamasa Kono2, Masaomi Tsuru1, Naoki Sakai1, Kenji Itoh1 (1. kanazawa institute of technology, 2. Nisshinbo Micro Devices Inc.)
Keywords:
GaAs,E-pHEMT gated anode diode,rectifier