Presentation Information

[B-20-13]5.8 GHz band low power rectenna with low-threshold voltage GaAs E-pHEMT GADs

◎Shotaro Machida1, Taiki Hirase1, Yuya Hirose1, Gaku Kato2, Takamasa Kono2, Masaomi Tsuru1, Naoki Sakai1, Kenji Itoh1 (1. kanazawa institute of technology, 2. Nisshinbo Micro Devices Inc.)

Keywords:

GaAs,E-pHEMT gated anode diode,rectifier

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