[C-10] 電子デバイス

11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[C-10-03] (Invited Presentation) Device fabrication and characterization of GaN HBTs with a p-type base region based on GaInN/GaN MQW structures

〇Ryosei Inoue¹, Tomoki Kojima¹, Akira Mase¹, Takashi Egawa¹, Makoto Miyoshi¹ (1. Nagoya Institute of Technology)

Keywords:

HBT,MQW,2DHG,GaN,GaInN

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