Presentation Information
[C-10-04]300-GHz-band Subharmonic Mixers Using InP-based MOS-HEMTs
〇Yasuhiro Nakasha1, Shiro Ozaki1, Yusuke Kumazaki1, Naoya Okamoto1, Shoichi Shiba1, Masaru Sato1, Naoki Hara1, Toshihiro Ohki1 (1. Fujitsu Limited)
Keywords:
InP-based MOS-HEMT,Sub-Terahertz,Subharmonic Mixer