Presentation Information
[C-2A-04]An Artificial Neural Network-Based Model for Bias Dependence of Trapping Effects in GaN-HEMTs
〇Yutaro Yamaguchi1, Ken Kudara1, Shintaro Shinjo1, Koji Yamanaka1 (1. Mitsubishi Electric Corporation)
Keywords:
GaN,HEMT,Model,Trap,Neural Network