Presentation Information

[C-2A-04]An Artificial Neural Network-Based Model for Bias Dependence of Trapping Effects in GaN-HEMTs

〇Yutaro Yamaguchi1, Ken Kudara1, Shintaro Shinjo1, Koji Yamanaka1 (1. Mitsubishi Electric Corporation)

Keywords:

GaN,HEMT,Model,Trap,Neural Network

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