[C-2A] Microwave and Millimeter Wave Active Devices and Circuits

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[C-2A-10] Rectification characteristics of the 0.2 μm low-threshold GaAs E-pHEMT GAD

◎△Yusuke Sato¹, Naoki Sakai¹, Kenji Itoh¹, Gaku Kato², Naoki Nomura² (1. Kanazawa Institute of Technology, 2. Nisshinbo Micro Devices Inc.)

Keywords:

GaAs,gated anode diode,Microwave