Presentation Information
[C-3_C-4-39]III-V membrane/Si MOS type Mach-Zehnder modulators by using chip-on-wafer bonding technology
〇Naotaka Kasuya1,2,3, Kento Komatsu1,2,3, Hajime Tanaka1,2,3, Naoko Inoue1,2,3, Takehiko Kikuchi1,2,3, Takuya Mitarai1,2,3, Shun Kimura1,2, Naoki Fujiwara1,2,3, Mitsuru Takenaka4, Nobuhiko Nishiyama1,3, Hideki Yagi1,2,3 (1. Photonics Electronics Technology Research Association, 2. Transmission Devices Laboratory, Sumitomo Electric Industries, Ltd., 3. Dept. of Electrical and Electronic Engineering, Institute of Science Tokyo, 4. Dept. of Electrical Engineering and Information Systems, The University of Tokyo)
Keywords:
III-V/Si heterogeneous integration,Mach-Zehnder modulator,MOS structure
