Presentation Information
[AS-1-04]Molecular Beam Epitaxial Growth and Properties of Emerging Group-III Nitrides:
AlBN, AlScN, AlYN, and AlLaN
*Chandrashekhar Savant1, Thai-Son Nguyen1, Kazuki Nomoto2, Huili Grace Xing1,2,3, Debdeep Jena1,2,3 (1. Department of Materials Science and Engineering, Cornell University, Ithaca, New York, 14853, USA, 2. School of Electrical and Computer Engineering, Cornell University, Ithaca, New York, 14853, USA, 3. Kavli Institute at Cornell, Cornell University Ithaca, New York 14853 USA)
