Session Details
[AS-001]ASPIRE
Sun. Dec 14, 2025 9:00 AM - 10:20 AM JST
Sun. Dec 14, 2025 12:00 AM - 1:20 AM UTC
Sun. Dec 14, 2025 12:00 AM - 1:20 AM UTC
ES Hall(ES Building)
[AS-1-01]Evidence for Avalanche and its Role in Lateral and Vertical Gallium Nitride Devices
*C. De Santi1, R. Fraccaroli1, M. Fregolent1, M. Dell’ Andrea1, I. Rossetto1, M. Boito1, E. Canato2, A. Pirani3, G. Pizzo3, C. Miccoli4 (1. Department of Information Engineering, University of Padova, Padova (PD), Italy , 2. STMicroelectronics, Agrate Brianza (MB), Italy , 3. STMicroelectronics, Cornaredo (MI), Italy , 4. STMicroelectronics, Catania (CT), Italy , 5. Department of Physics and Astronomy, University of Padova, Padova (PD), Italy)
[AS-1-02]Electro-Optical Mapping of Electrical Field in advanced GaN devices with micrometer resolution
*Anjali Anjali1, James Pomeroy1, Yuke Cao1, Martin Kuball 1 (1. Center for Device Thermography and Reliability, H.H. Wills Physics Laboratory, University of Bristol)
[AS-1-03]Impact of Device Architecture on the Thermal Management of AlGaN Semiconductor Devices
*Kidus Guye1, E. G. Jurcik1, D. Orlandini2, Y. Zhu2, A. Allerman3, H. Aller1, S. Rajan2, J. S. Lundh4, K. Hobart4, D. Agonafer1, S. Graham1 (1. Department of Mechanical Engineering, University of Maryland, College Park, MD 20740, USA, 2. Department of Electrical and Computer Engineering, The Ohio State University, 3. Sandia National Laboratories, Albuquerque, New Mexico 87123, USA , 4. US Naval Research Laboratory, Washington, DC, USA)
[AS-1-04]Molecular Beam Epitaxial Growth and Properties of Emerging Group-III Nitrides:
AlBN, AlScN, AlYN, and AlLaN
*Chandrashekhar Savant1, Thai-Son Nguyen1, Kazuki Nomoto2, Huili Grace Xing1,2,3, Debdeep Jena1,2,3 (1. Department of Materials Science and Engineering, Cornell University, Ithaca, New York, 14853, USA, 2. School of Electrical and Computer Engineering, Cornell University, Ithaca, New York, 14853, USA, 3. Kavli Institute at Cornell, Cornell University Ithaca, New York 14853 USA)