Presentation Information
[AS-P-001-10]A Compact Model for Polar Multiple-Channel Field Effect Transistors: A Case Study in III-V Nitride Semiconductors
*Aias Asteris1、Thai-Son Nguyen1、Huili Grace Xing1,2,3、Debdeep Jena1,2,3 (1. Department of Materials Science and Engineering, Cornell University、2. School of Electrical and Computer Engineering, Cornell University、3. Kavli Institute at Cornell for Nanoscale Science, Cornell University)