Presentation Information
[AS-P-001-11]The Sapphire Regime: Realizing Si-Doped α-(AlxGa1-x)2O3 Films with Eg > 7 eV with S-MBE
*Jacob Steele1、Kazuki Nomoto2、Debaditya Bhattacharya2、Huili G. Xing1,2,4、Debdeep Jena1,2,4、Darrell. G. Schlom1,3,4 (1. Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, USA、2. School of Electrical and Computer Engineering, Cornell University, Ithaca, New York 14853, USA、3. Platform for the Accelerated Realization, Analysis, and Discovery of Interface Materials (PARADIM), Cornell University, Ithaca, New York 14853, USA, 、4. Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14853, USA)