[NNS/AS-P-001] Novel Nitride Semiconductors and their Functional Revolution P1 / ASPIRE P1

[AS-P-001-14] First demonstration of N-polar high Al-content AlGaN channel HEMT grown by plasma-assisted molecular beam epitaxy

*Stefan Kosanovic¹、Irfan Khan²、Harsh Rana¹、Rijo Baby¹、Elaheh Ahmadi² (1. Department of Electrical and Computer Engineering, University of California, Los Angeles 、2. Electrical and Computer Engineering Department, University of California, Santa Barbara)