Presentation Information
[AS-P-001-16]Effect of growth temperature on the GaN/AlN in N-polar AlN-based HEMT
*Itsuki Furuhashi1、Xu Yang2、Yoann Robin2、Yoshio Honda2、Hiroshi Amano2、Markus Pristovsek2 (1. Graduate School of Engineering, Nagoya Univeristy 、2. Institute of Materials and Systems for Sustainability (IMaSS), Nagoya University)