Presentation Information
[AS-P-001-3]Modeling the Changes in the Electrical Properties of Vertical GaN-on-GaN pin Diodes Under Electrical Stress
*Simone Leonardo Longato1、Ambra Maria Vianello1、Manuel Fregolent1、Dawei Wang3、Houqiang Fu3、Shisong Luo4、Yuji Zhao4、Matteo Buffolo1,2、Isabella Rossetto1、Carlo De Santi1、Gaudenzio Meneghesso1、 Enrico Zanoni1、Matteo Meneghini1,2 (1. Department of Information Engineering, Padova University, 、2. Department of Physics and Astronomy, University of Padova 、3. School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, AZ 85281, USA 、4. Department of Electrical and Computer Engineering, Rice University, Houston, TX 77005, USA)