[NNS/AS-P-001] Novel Nitride Semiconductors and their Functional Revolution P1 / ASPIRE P1

[AS-P-001-6] Bias- and Temperature-Induced On-State Resistance Degradation in 650 V p-GaN HEMTs

*Renze Yu¹、Saeed Jahdi¹、Martin Kuball² (1. School of Electrical, Electronic and Mechanical Engineering, University of Bristol, UK 、2. School of Physics, University of Bristol, UK)