Presentation Information

[MD-P-1-25]Surface Planarization Mechanism during Dissolution in Solution Growth of 4H-SiC

*Shuto Sugimoto1, Toru Ujihara1,2, Shunta Harada1,2, Kentaro Kutukake1,2 (1. Graduate School of Engineering, Nagoya University, Japan, 2. Institute of Materials and Systems for Sustainablity, Nagoya University, Japan)