Presentation Information

[NNS-3-01]Transport in N-polar AlN-based HEMTs with thin GaN channels on sapphire

*Markus Pristovsek1, Yoann Robin1, Xu Yang1, Itsuki Furuhashi1, Chengzhi Zhang2, Matthew D Smith2, Martin Kuball2, Sheng Zhang3, Xinhua Wang3 (1. CIRFE, Nagoya University, 2. University of Bristol, UK, 3. Inst. Microelectronics, CAS, China)