[NNS/AS-P-001] Novel Nitride Semiconductors and their Functional Revolution P1 / ASPIRE P1

[NNS-P-1-07] Evaluation of Insulator/GaN Interface Properties in MOSFETs with Floating Gate Structure

*Xigen Li¹, Manato Deki², Hirotaka Watanabe³, Shun Lu³, Jia Wang⁴, Shugo Nitta⁵, Yoshio Honda^1,2,3,4, Hiroshi Amano^1,2,3,4 (1. Department of Electronics, Nagoya University, 2. Deep Tech Serial Innovation Center, Nagoya University, 3. Institute of Materials and System for Sustainability, Nagoya University, 4. Institute for Advanced Research, Nagoya University, 5. Innovation center for semiconductor and digital future, Mie University)