[NNS/AS-P-001] Novel Nitride Semiconductors and their Functional Revolution P1 / ASPIRE P1

[NNS-P-1-08] Evaluation of a surface conductive layer on etched u-GaN by C-V characteristics for charge balance evaluation of polarization superjunction GaN FETs

*Eito Kokubo¹, Hirotaka Watanabe², Atsushi Tanaka², Manato Deki³, Yoshio Honda^2,3,4, Hiroshi Amano^2,3,4 (1. Department of Electronics, Nagoya University, 2. Institute of Materials and Systems for Sustainability, Nagoya University, 3. Deep Tech Serial Innovation Center, Nagoya University, 4. Institute for Advanced Research, Nagoya University)