Presentation Information
[NNS-P-1-09]Room temperature electroluminescence of Pr-implanted GaN p-n junction diode
*Shin Ito1, Shin-ichiro Sato2, Michal Bockowski3, Manato Deki4, Hirotaka Watanabe5, Shugo Nitta7, Maki Kushimoto1, Atsushi Tanaka5, Ken-ichi Yoshida8, Hideki Minagawa8, Yoshio Honda4,5,6, Hiroshi Amano4,5,6 (1. Graduate School of Engineering, Nagoya University, 2. National Institutes for Quantum Science and Technology, 3. Institute of High Pressure Physics, Polish Academy of Sciences, 4. Deep Tech Serial Innovation Center, Nagoya University, 5. Institute of Materials and Systems for Sustainability, 6. Institute for Advanced Research, Nagoya University, 7. Innovation Center for Semiconductor and Digital Future, Mie University, 8. Ion Technology Center Co.,Ltd.)