Session Details
[NNS-001]Novel Nitride Semiconductors and their Functional Revolution 1
Sat. Dec 13, 2025 9:00 AM - 10:30 AM JST
Sat. Dec 13, 2025 12:00 AM - 1:30 AM UTC
Sat. Dec 13, 2025 12:00 AM - 1:30 AM UTC
ES Hall(ES Building)
[NNS-1-01]Development of BGaN Semiconductor Devices for Neutron Semiconductor Detectors
*Takayuki Nakano1 (1. Shizuoka University)
[NNS-1-02]Sputter Epitaxy of Superconducting NbN and Ferroelectric ScAlN on Nitride Semiconductors
*Atsushi Kobayashi1 (1. Tokyo University of Science)
[NNS-1-03]Transport Properties of 2DEG in ScAlN/GaN heterostructures (Tentative)
Takuya Maeda (The University of Tokyo, Japan)
