[Th-A1-G] Control of crystal phase & interface

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[Th-A1-G-01] Atomically Flat Al/Ge Heterostructures and Their Interface Lattice Structures

〇Ding-Ming Huang¹, Jian-Huan Wang¹, Jian-Jun Zhang², Hongqi Xu^1,3 (1. Beijing Academy of Quantum Information Sciences (China), 2. Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences (China), 3. Beijing Key Laboratory of Quantum Devices, Peking University (China))

Single-crystalline Al thin films were epitaxially grown on Ge substrates via molecular beam epitaxy, featuring an atomically flat interface. Scanning tunneling microscopy measurements reveal a commensurately matched Al/Ge interface lattice and a spatial homogeneity in electron-phonon coupling strength within the Al film.