[Th-A1-G] Control of crystal phase & interface | ICPS2026

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01: Material growth, structural properties, and characterization (bulk, nanowires, dots)

[Th-A1-G]Control of crystal phase & interface

Thu. Aug 20, 2026 9:00 AM - 10:30 AM JST
Thu. Aug 20, 2026 12:00 AM - 1:30 AM UTC

Room G (Room COMET)(Main Tower 43th floor)

9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[Th-A1-G-01]Atomically Flat Al/Ge Heterostructures and Their Interface Lattice Structures

〇Ding-Ming Huang¹, Jian-Huan Wang¹, Jian-Jun Zhang², Hongqi Xu^1,3 (1. Beijing Academy of Quantum Information Sciences (China), 2. Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences (China), 3. Beijing Key Laboratory of Quantum Devices, Peking University (China))

9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)

[Th-A1-G-02]Epitaxial Growth and Characterization of Superconducting Vanadium / III-V Semiconductor Heterostructures

〇Kota Iwakura¹, Ryusei Wakasa¹, Tomoki Hotta¹, Hideki Maki¹, Masaaki Tanaka^1,2, Le Duc Anh^1,2 (1. The University of Tokyo (Japan), 2. Center for Spintronics Research Network (Japan))

9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[Th-A1-G-03]Superconductivity and Suppressed Monoclinic Distortion in FeTe Films Enabled by Higher-Order Epitaxy

〇Yuki Sato¹, Soma Nagahama², Shunsuke Kitou², Hajime Sagayama³, Ilya Belopolski¹, Ryutaro Yoshimi^1,2, Minoru Kawamura¹, Atsushi Tsukazaki^2,4, Naoya Kanazawa², Takuya Nomoto⁵, Ryutaro Arita^1,2, Taka-hisa Arima^1,2, Masashi Kawasaki^1,2, Yoshinori Tokura^1,2 (1. RIKEN (Japan), 2. The Univ. of Tokyo (Japan), 3. High Energy Accelerator Research Organization (Japan), 4. Tohoku University (Japan), 5. Tokyo Metropolitan University (Japan))

9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[Th-A1-G-04]Dielectric Function Tensor of CuPt-Ordered GaAsBi

〇Saulius Tumenas¹, Aidas Mikalauskas¹, Tadas Paulauskas¹, Renata Butkute¹, Vaidas Pacebutas¹, Vytautas Karpus¹ (1. Center for Physical Sciences and Technology (FTMC) (Lithuania))

10:00 AM - 10:30 AM JST(1:00 AM - 1:30 AM UTC)

[Th-A1-G-05]Topotaxy-Based MBE Growth of Zintl Phases:
From Eu5In2As6 Nanowires and Layers to a New Eu5Ga2As6 Zintl Phase

〇Hadas Shtrikman¹ (1. Weizmann Institute (Israel))

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