[Th-A1-G] Control of crystal phase & interface

9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)

[Th-A1-G-02] Epitaxial Growth and Characterization of Superconducting Vanadium / III-V Semiconductor Heterostructures

〇Kota Iwakura¹, Ryusei Wakasa¹, Tomoki Hotta¹, Hideki Maki¹, Masaaki Tanaka^1,2, Le Duc Anh^1,2 (1. The University of Tokyo (Japan), 2. Center for Spintronics Research Network (Japan))

For the realization of quantum computers, new material combinations with high-quality interface and large critical magnetic filed are under investigation. In this study, we demonstrate that Vanadium thin film can be epitaxially grown on the III-V semiconductor GaSb.