[Th-A1-G] Control of crystal phase & interface

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[Th-A1-G-04] Dielectric Function Tensor of CuPt-Ordered GaAsBi

〇Saulius Tumenas¹, Aidas Mikalauskas¹, Tadas Paulauskas¹, Renata Butkute¹, Vaidas Pacebutas¹, Vytautas Karpus¹ (1. Center for Physical Sciences and Technology (FTMC) (Lithuania))

CuPt ordering in epitaxial GaAsBi alloys induces optical anisotropy, studied by Mueller matrix spectroscopic ellipsometry. The dielectric function tensor reveals an ordering-induced valence-band splitting of 40–100 meV, stable across 98–623 K, and an E1* critical point consistent with zone-folding selection rules.