[Th-A1-G] Control of crystal phase & interface

10:00 AM - 10:30 AM JST(1:00 AM - 1:30 AM UTC)

[Th-A1-G-05 (Invited)] Topotaxy-Based MBE Growth of Zintl Phases:
From Eu5In2As6 Nanowires and Layers to a New Eu5Ga2As6 Zintl Phase

〇Hadas Shtrikman¹ (1. Weizmann Institute (Israel))

Rare-earth europium, was incorporated in III-V semiconductor nanowires and epilayers yielding pioneering work that expands the field of materials science and broadens the utilization of magnetic materials. We demonstrate the conversion of III-V compound semiconductors into magnetic Zintl phases through mutual topotactic exchange.