[We-A2-H] Polarization and defect physics in nitrides

11:00 AM - 11:30 AM JST(2:00 AM - 2:30 AM UTC)

[We-A2-H-01 (Invited)] Correct treatment of polarization fields in wurtzite-structure semiconductors

〇Chris G. Van de Walle¹ (1. University of California, Santa Barbara (USA))

I will describe how first-principles calculations based on the Modern Theory of Polarization provide a consistent framework for modeling polarization in wurtzite-structure alloys and at interfaces, including examples for GaN, AlN, InN and their alloys, as well as AlScN, AlBN, and LaN.