[Th-A1-H] Polarization and defect physics in nitrides | ICPS2026

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Session Details

02: Wide-bandgap semiconductors and devices

[Th-A1-H]Polarization and defect physics in nitrides

Thu. Aug 20, 2026 9:00 AM - 10:30 AM JST
Thu. Aug 20, 2026 12:00 AM - 1:30 AM UTC

Room H (Room STAR LIGHT)(Main Tower 43th floor)

9:00 AM - 9:30 AM JST(12:00 AM - 12:30 AM UTC)

[Th-A1-H-01]Correct treatment of polarization fields in wurtzite-structure semiconductors

〇Chris G. Van de Walle¹ (1. University of California, Santa Barbara (USA))

9:30 AM - 10:00 AM JST(12:30 AM - 1:00 AM UTC)

[Th-A1-H-02]Hybrid Quantum Defect Complexes in Wide-Bandgap Nitride Materials

〇Gabriele Grosso¹, Saifa Amin¹, Aidan Jimenez¹, Enrique Mejia¹, Yifeng Cao², Martino Silvetti³, Andrea Biondini³, Marco Govoni³, Jonathan Pelliciari² (1. Advanced Science Research Center, City University of New York (USA), 2. Brookhaven National Laboratory (BNL) (USA), 3. University of Modena and Reggio Emilia (Italy))

10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[Th-A1-H-03]Tailoring Dislocation Cores in Gallium Nitride by in-situ Electron Beam Irradiation

〇Han Yang¹, Lin Yao¹, Xuelin Yang¹, Bo Shen¹ (1. Peking University (China))

10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)

[Th-A1-H-04]3D Atomic-scale observation of stacking fault migration

〇Xifan Xu¹, Tao Wang¹, Xinqiang Wang¹ (1. Peking university (China))

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