[Th-A1-H] New trend and electronic properties in nitrides | ICPS2026

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Session Details

02: Wide-bandgap semiconductors and devices

[Th-A1-H]New trend and electronic properties in nitrides

Thu. Aug 20, 2026 9:00 AM - 10:30 AM JST
Thu. Aug 20, 2026 12:00 AM - 1:30 AM UTC

Room H (STAR LIGHT)(Main Tower 43F)

Chair:Chris G. Van de Walle (Univ. of California, Santa Barbara)

9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[Th-A1-H-01]Towards Flat Band Surfaces in Three-Dimensional Wide Band Gap Semiconductors for Electron Spectroscopy Measurements

〇Tanay Tak¹, Jonathan Ludwick², Zachary J Biegler¹, Griffin K Tong¹, Jacques Peretti³, Claude Weisbuch^1,3, Tyson C Back², James S Speck¹ (1. Univ. of California, Santa Barbara (USA), 2. Air Force Res. Lab. (USA), 3. Ecole Polytechnique (France))

9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)

[Th-A1-H-02]Cyclotron resonance in In_xGa_1-xN two-dimensional electron systems

〇Yasutaka IMANAKA¹, Dickson Zakaria Kindole¹, Masatomo Sumiya¹ (1. National Institute for Materials Science (Japan))

9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[Th-A1-H-03]Observation of Local Vibrational Modes of Compensating Defects in Heavily Si-doped AlN

〇Yingming Song¹, Huangshu Zhang¹, Xuelin Yang¹, Bo Shen¹ (1. Peking University (China))

9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[Th-A1-H-04]Using Hydrogen Plasma to Improve Breakdown Behavior in GaN-on-Si p–n Diodes

〇David Alejandro Plaza Arguello¹, Nevine Rochat¹, Zakariae M'Qaddem¹, Thomas Kaltsounis, Hala El Rammouz¹, Matthieu Lafossas¹, Simona Torrengo¹, Hassan Maher², Thibaud Guillemin³, Yvon Cordier³, Julien Buckley¹, Matthew Charles¹ (1. Inst. CEA-LETI (France), 2. LN2, Univ. of Sherbrooke (Canada), 3. Inst. CRHEA, Univ. Côte d’Azur (France))

10:00 AM - 10:30 AM JST(1:00 AM - 1:30 AM UTC)

[Th-A1-H-05 (Invited)]Quantum computation and communication devices using nitride semiconductors and superconductors

〇Debdeep Jena¹ (1. Cornell Univ. (USA))

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