[We-A2-H] Polarization and defect physics in nitrides

12:00 PM - 12:15 PM JST(3:00 AM - 3:15 AM UTC)

[We-A2-H-03] Tailoring Dislocation Cores in Gallium Nitride by in-situ Electron Beam Irradiation

〇Han Yang¹, Lin Yao¹, Xuelin Yang¹, Bo Shen¹ (1. Peking University (China))

We demonstrate reversible, atomic-scale control of dislocation cores in GaN using a targeted knock-on (TKO) in-situ electron irradiation scheme, expanding and contracting the dissociation width far beyond equilibrium. This TKO strategy establishes a new pathway for atomic-scale defect engineering.