[Th-A2-G] Advanced characterizations

11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[Th-A2-G-01] Improving Electronic Properties of Strained GaAs/In_xAl_1-xAs Core/Shell Nanowires through Interface Engineering

〇Xiaoxiao Sun^1,2, Alexej Pashkin², Rene Hübner², Stephan Winnerl², Manfred Helm^2,3, Emmanouil Dimakis² (1. Peking University Shenzhen Graduate School (China), 2. Helmholtz-Zentrum Dresden-Rossendorf (Germany), 3. TUD Dresden University of Technology (Germany))

We investigate interface engineering in strained GaAs/In_xAl_1-xAs core/shell nanowires. By inserting a spacer shell or optimizing the shell growth temperature, we suppress non-radiative recombination at the strain interface, achieving enhanced PL emission, extended carrier lifetimes, improved electron mobility.