Session Details
[Th-A2-G]Advanced characterizations
Thu. Aug 20, 2026 11:00 AM - 12:30 PM JST
Thu. Aug 20, 2026 2:00 AM - 3:30 AM UTC
Thu. Aug 20, 2026 2:00 AM - 3:30 AM UTC
Room G (Room COMET)(Main Tower 43th floor)
[Th-A2-G-01]Improving Electronic Properties of Strained GaAs/InxAl1-xAs Core/Shell Nanowires through Interface Engineering
〇Xiaoxiao Sun1,2, Alexej Pashkin2, Rene Hübner2, Stephan Winnerl2, Manfred Helm2,3, Emmanouil Dimakis2 (1. Peking University Shenzhen Graduate School (China), 2. Helmholtz-Zentrum Dresden-Rossendorf (Germany), 3. TUD Dresden University of Technology (Germany))
[Th-A2-G-02]Atomic-Scale Composition and Electronic Properties of GaSb/AlGaSb Superlattices Studied by Cross-Sectional Scanning Tunneling Microscopy (X-STM)
〇Hitesh Kumar1, Rüdiger Schott2, Zijin Lei2, Werner Wegscheider2, Stefan Fölsch1 (1. Paul Drude Inst. for Solid State Electronics (Germany), 2. Lab. for Solid State Physics, ETH Zürich (Switzerland))
[Th-A2-G-03]In Situ Growth of Group III-V Nanowires
〇Mikelis Marnauza1,2 (1. MIT (USA), 2. Lund University (Sweden))
[Th-A2-G-04]High Resolution Momentum Resolved Transmission Electron Energy-Loss Spectroscopy: Anisotropic Plasmon Dispersion of Gallium Phosphide
〇Tanay Tak1, Eric R Hoglund2, Feng Wu1, Thian Daniel Iskandar1, Jordan A Hachtel2, James S Speck1 (1. Univ. of California, Santa Barbara (USA), 2. Oak Ridge National Lab. (USA))
[Th-A2-G-05]Novel Insights into Light Emission Mechanisms in ZnS:Cu: A Correlative Atom Probe and Electron Microscopy Analysis
〇Roberto - Hernandez1,4, Lorenzo Rigutti2, Jesus Cañas3, Jonathan Houard2, Ludovic Largeau1, Stefano Pirotta1, Nathaniel Findling1, Florant Exertier2, Francois Julien1, Jules Duraz1, Sidahmed Beddar4, Maria Tchernycheva1 (1. Centre de Nanosciences et de Nanotechnologies (C2N), Univ. Paris-Saclay (France), 2. UNIROUEN, CNRS, Groupe de Physique des Matériaux, Normandie Uni. (France), 3. Univ. Grenoble-Alpes, CNRS, Grenoble INP, Institut Néel, 38000 Grenoble, France (France), 4. Valeo Vision (France))
