[Th-A2-G] Advanced characterizations

11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[Th-A2-G-02] Atomic-Scale Composition and Electronic Properties of GaSb/AlGaSb Superlattices Studied by Cross-Sectional Scanning Tunneling Microscopy (X-STM)

〇Hitesh Kumar¹, Rüdiger Schott², Zijin Lei², Werner Wegscheider², Stefan Fölsch¹ (1. Paul Drude Inst. for Solid State Electronics (Germany), 2. Lab. for Solid State Physics, ETH Zürich (Switzerland))

We investigate the compositional intermixing and electronic properties of ternary AlGaSb by X-STM: Al- and Ga-rich areas are formed, following an exponential size distribution. This inhomogeneity leads to variations in the conduction-band DOS but doesn’t affect the energy band gap.