Presentation Information
[Th-P-04]Self-Selective Cross-Point Non-Volatile Random Access Memory Realized with Graphene/Ferroelectric/Metal Stack
Jinyoung Park2, 〇Hyunmin Kwun1, Hyunjae Park1, Jiwan Kim1, Jaehyeong Jo1, Junhyung Kim3, Sungchul Jung4, Wonho Song5, Myong Kong6, Seokhyeong Kang6, Kibog Park1 (1. Ulsan National Inst. of Sci. and Tech. (UNIST) (Korea), 2. Samsung Electronics (Korea), 3. Electronics and Telecommunications Res. Inst. (Korea), 4. SK Hynix (Korea), 5. LG Display (Korea), 6. Pohang Univ. of Sci. and Tech. (Korea))