[Th-P] 2D matrials | ICPS2026

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Session Details

04: Graphene, 2D materials

[Th-P]2D matrials

Thu. Aug 20, 2026 5:45 PM - 7:30 PM JST
Thu. Aug 20, 2026 8:45 AM - 10:30 AM UTC

Kogakuin Univ. (Poster C1)(Poster)

[Th-P-01]Charge and Spin-Valley Currents Excited by Structured Lightin Two-Dimensional Dirac Materials

〇Alexey Gunyaga¹, Mikhail Durnev¹, Sergey Tarasenko¹ (1. Ioffe Inst. (Russia))

[Th-P-02]Tailoring Exciton Wave Packets in 2D Materials Using Topological Optical Vortex Beams

〇Guan-Hao Peng¹, Oscar Javier Gómez Sánchez¹, Ren-Ying Liu¹, Shun-Jen Cheng¹ (1. National Yang Ming Chiao Tung Univ. (Taiwan))

[Th-P-03]CFD-Based Analysis and Experimental Validation of WSe2 Deposition in Chemical Vapor Deposition

〇Hua-Lin Chen¹, Ting-En Su² (1. National Center for Instrumentation Research, NIAR (Taiwan), 2. Feng Chia University (Taiwan))

[Th-P-04]Self-Selective Cross-Point Non-Volatile Random Access Memory Realized with Graphene/Ferroelectric/Metal Stack

Jinyoung Park², 〇Hyunmin Kwun¹, Hyunjae Park¹, Jiwan Kim¹, Jaehyeong Jo¹, Junhyung Kim³, Sungchul Jung⁴, Wonho Song⁵, Myong Kong⁶, Seokhyeong Kang⁶, Kibog Park¹ (1. Ulsan National Inst. of Sci. and Tech. (UNIST) (Korea), 2. Samsung Electronics (Korea), 3. Electronics and Telecommunications Res. Inst. (Korea), 4. SK Hynix (Korea), 5. LG Display (Korea), 6. Pohang Univ. of Sci. and Tech. (Korea))

[Th-P-05]Theory of Charged Excitons Fine Structure in Two-Dimensional Semiconductors

〇Zakhar A. Iakovlev¹, Mikhail M. Glazov¹ (1. Ioffe Inst. (Russia))

[Th-P-06]Layer-Dependent Thermal Expansion and Phonon Dynamics in MoS2 Investigated by Temperature-Dependent Raman Spectroscopy

〇Hoang The Nguyen¹, Deepu Kumar², Jungyoon Cho¹, Dong-Wook Kim¹, Maeng-Je Seong², Seokhyun Yoon¹ (1. Univ. of Ewha women (Korea), 2. Univ. of Chung-Ang (Korea))

[Th-P-07]Ultrasensitive semiconductor Gas devices based on two-dimensional graphyne

〇Chiu-Hsien Wu¹, Pei-Ying Wu², Chun-En Lin¹, Utkarsh Kumar¹, Kuang-Yao Lo³ (1. Department of Physics, National Chung-Hsing Univ. (Taiwan), 2. Inst.of Nanoscience, National Chung-Hsing Univ. (Taiwan), 3. Department of Physics, National Cheng Kung Univ. (Taiwan))

[Th-P-08]Suspended Graphene Photodetector with asymmetric Metal
contacts

〇Yiwei Yang¹, Ryota Seki¹, Rei Shuto¹, Isao Morohashi², Ya Zhang¹ (1. Tokyo Univ. of Agri. & Tech. (Japan), 2. National Inst. of Info. & Commun. Tech. (Japan))

[Th-P-09]Emergent microwave resonances in atomically layered TMD thin films

Isaque Duarte Batista¹, Guilherme Macagnani Souza¹, Allan Tardiolle¹, César Augusto Dartora², Lécio Montanheiro², 〇Alex Aparecido Ferreira¹ (1. Physics Dept., UNIV. FEDERAL DO PARANÁ (Brazil), 2. Electrical Engineering Dept., UNIV. FEDERAL DO PARANÁ (Brazil))

[Th-P-10]Coulomb Correlations in the Shift and Ballistic Photogalvanic Effect in TMDC Monolayers

〇Grigory Budkin¹, Eougenious Ivchenko¹ (1. Ioffe Institute (Russia))

[Th-P-11]Valley Mixing and Polarization of Interface Excitons at Lateral Heterojunctions

Mikhail V. Durnev¹, 〇Dmitry S. Smirnov¹ (1. Ioffe Inst. (Russia))

[Th-P-12]Out-of-Plane Spin Anisotropy Induced by Intrinsic Spin–Orbit Coupling in Graphene: Angle-Dependent Resistively Detected ESR

〇Katsushi Hashimoto^1,2, Wataru Izmida¹, Songtian Li³, Seiji Sakai³, Yoshiro Hirayama^2,3 (1. Tohoku Univ. (Japan), 2. CSIS, Tohoku Univ. (Japan), 3. National Inst. for Quantum Sci. and Tech. (Japan))

[Th-P-13]Epitaxial Wafer-Scale Growth of Monolayer WS₂ on Sapphire by BTBMW-Based MOCVD

〇Wei-Chun Chen¹, Zih-Siang Jian^1,2,3, Wei-Lin Wang¹, Hui-Wen Chang¹, Yu-Wei Lin¹, Wen-Hao Chang^1,2,3 (1. National Center for Instrumentation Research, National Institutes of Applied Research (Taiwan), 2. Department of Electrophysics, National Yang Ming Chiao Tung University (Taiwan), 3. Research Center for Critical Issues, Academia Sinica (Taiwan))

[Th-P-14]Patterned Gold-Assisted Exfoliation of Monolayer MoS₂ Utilizing an Ion Mill

〇Connor William Magee¹, Louis Smet¹, Daiki Sekine^2,1, Hao Ding¹, Sato Yamamoto¹, Jun Ishihara¹, Makoto Kohda^1,2,3 (1. Tohoku Univ. (Japan), 2. QST (Japan), 3. CSIS (Japan))

[Th-P-15]Two-dimensional semiconducting carbides for gas sensing

〇Luis Antonio Perez¹, Ivonne Judith Hernández-Hernández¹, Alma Lorena Marcos-Viquez², Álvaro Miranda³, Miguel Cruz-Irisson³ (1. Instituto de Física, Universidad Nacional Autónoma de México (Mexico), 2. Instituto de Ciencia Molecular, Universitat de València (Spain), 3. Instituto Politécnico Nacional, ESIME-Culhuacán (Mexico))

[Th-P-16]Quantum Critical Scarling of Anomalous Hall Conductivity in an Organic Massless Dirac Semimetal

〇Sana Nakamichi¹, Yoshitaka Kawasugi¹, Naoya Tajima¹ (1. Toho univ. (Japan))

[Th-P-17]Quantum Interference in Valley Hall Regime Observed in MoS₂ Hall Bar

Yusuke Nakamura¹, Yusuke Nakayama¹, Takeru Kobayashi¹, David K. Ferry², Jonathan P. Bird^1,3, 〇Nobuyuki Aoki¹ (1. Chiba Univ. (Japan), 2. Arizona State Univ. (USA), 3. SUNY Buffalo (USA))

[Th-P-18]Topological Origin of Large Optical Absorption in Obstructed Atomic Insulator h-TMDs

〇Seungil Baek¹, Jun Jung¹, Yong-Hyun Kim^1,2 (1. KAIST (Korea), 2. Suranaree Univ. of Tech. (Thailand))

[Th-P-19]Electrical Characterization of Sb Contacts to Atomically Thin TMDs and Gate-Defined MoSe₂ Quantum Dots

〇Seungwoo Lee¹, Yunsang Noh¹, Minjun Park¹, Sung Jin An², Takashi Taniguchi³, Kenji Watanabe⁴, Minkyung Jung², Youngwook Kim¹ (1. Department of Physics and Chemistry, Daegu Gyeongbuk Inst. of Sci. and Tech. (DGIST) (Korea), 2. DGIST Res. Inst., Daegu Gyeongbuk Institute of Science and Technology (DGIST) (Korea), 3. Res. Center for Materials Nanoarchitectonics, National Inst. for Materials Sci. (Japan), 4. Res. Center for Electronic and Optical Materials, National Inst. for Materials Sci. (Japan))

ICPS2026

Session Details

[Th-P]2D matrials

[Th-P-01]Charge and Spin-Valley Currents Excited by Structured Lightin Two-Dimensional Dirac Materials

[Th-P-02]Tailoring Exciton Wave Packets in 2D Materials Using Topological Optical Vortex Beams

[Th-P-03]CFD-Based Analysis and Experimental Validation of WSe2 Deposition in Chemical Vapor Deposition

[Th-P-04]Self-Selective Cross-Point Non-Volatile Random Access Memory Realized with Graphene/Ferroelectric/Metal Stack

[Th-P-05]Theory of Charged Excitons Fine Structure in Two-Dimensional Semiconductors

[Th-P-06]Layer-Dependent Thermal Expansion and Phonon Dynamics in MoS2 Investigated by Temperature-Dependent Raman Spectroscopy

[Th-P-07]Ultrasensitive semiconductor Gas devices based on two-dimensional graphyne

[Th-P-08]Suspended Graphene Photodetector with asymmetric Metal
contacts

[Th-P-09]Emergent microwave resonances in atomically layered TMD thin films

[Th-P-10]Coulomb Correlations in the Shift and Ballistic Photogalvanic Effect in TMDC Monolayers

[Th-P-11]Valley Mixing and Polarization of Interface Excitons at Lateral Heterojunctions

[Th-P-12]Out-of-Plane Spin Anisotropy Induced by Intrinsic Spin–Orbit Coupling in Graphene: Angle-Dependent Resistively Detected ESR

[Th-P-13]Epitaxial Wafer-Scale Growth of Monolayer WS₂ on Sapphire by BTBMW-Based MOCVD

[Th-P-14]Patterned Gold-Assisted Exfoliation of Monolayer MoS₂ Utilizing an Ion Mill

[Th-P-15]Two-dimensional semiconducting carbides for gas sensing

[Th-P-16]Quantum Critical Scarling of Anomalous Hall Conductivity in an Organic Massless Dirac Semimetal

[Th-P-17]Quantum Interference in Valley Hall Regime Observed in MoS₂ Hall Bar

[Th-P-18]Topological Origin of Large Optical Absorption in Obstructed Atomic Insulator h-TMDs

[Th-P-19]Electrical Characterization of Sb Contacts to Atomically Thin TMDs and Gate-Defined MoSe₂ Quantum Dots

[Th-P-20]Controlling Interfacial Ferroelectricity and Its Interaction with the Environment

[Th-P-21]Electrical Characterization of Defects in Monolayer MoS₂ Heterostructure by Ion Beam Irradiation

[Th-P-22]Graphene oxide as the passivation material for optical energy conversion devices

[Th-P-23]Strain-Dependent Band Alignment and Fermi-Level Pinning at Metal-MoS2 Contacts

Session Details

[Th-P]2D matrials

[Th-P-01]Charge and Spin-Valley Currents Excited by Structured Lightin Two-Dimensional Dirac Materials

[Th-P-02]Tailoring Exciton Wave Packets in 2D Materials Using Topological Optical Vortex Beams

[Th-P-03]CFD-Based Analysis and Experimental Validation of WSe2 Deposition in Chemical Vapor Deposition

[Th-P-04]Self-Selective Cross-Point Non-Volatile Random Access Memory Realized with Graphene/Ferroelectric/Metal Stack

[Th-P-05]Theory of Charged Excitons Fine Structure in Two-Dimensional Semiconductors

[Th-P-06]Layer-Dependent Thermal Expansion and Phonon Dynamics in MoS2 Investigated by Temperature-Dependent Raman Spectroscopy

[Th-P-07]Ultrasensitive semiconductor Gas devices based on two-dimensional graphyne

[Th-P-08]Suspended Graphene Photodetector with asymmetric Metal contacts

[Th-P-09]Emergent microwave resonances in atomically layered TMD thin films

[Th-P-10]Coulomb Correlations in the Shift and Ballistic Photogalvanic Effect in TMDC Monolayers

[Th-P-11]Valley Mixing and Polarization of Interface Excitons at Lateral Heterojunctions

[Th-P-12]Out-of-Plane Spin Anisotropy Induced by Intrinsic Spin–Orbit Coupling in Graphene: Angle-Dependent Resistively Detected ESR

[Th-P-13]Epitaxial Wafer-Scale Growth of Monolayer WS2 on Sapphire by BTBMW-Based MOCVD

[Th-P-14]Patterned Gold-Assisted Exfoliation of Monolayer MoS2 Utilizing an Ion Mill

[Th-P-15]Two-dimensional semiconducting carbides for gas sensing

[Th-P-16]Quantum Critical Scarling of Anomalous Hall Conductivity in an Organic Massless Dirac Semimetal

[Th-P-17]Quantum Interference in Valley Hall Regime Observed in MoS2 Hall Bar

[Th-P-18]Topological Origin of Large Optical Absorption in Obstructed Atomic Insulator h-TMDs

[Th-P-19]Electrical Characterization of Sb Contacts to Atomically Thin TMDs and Gate-Defined MoSe2 Quantum Dots

[Th-P-20]Controlling Interfacial Ferroelectricity and Its Interaction with the Environment

[Th-P-21]Electrical Characterization of Defects in Monolayer MoS2 Heterostructure by Ion Beam Irradiation

[Th-P-22]Graphene oxide as the passivation material for optical energy conversion devices

[Th-P-23]Strain-Dependent Band Alignment and Fermi-Level Pinning at Metal-MoS2 Contacts

[Th-P-08]Suspended Graphene Photodetector with asymmetric Metal
contacts

[Th-P-13]Epitaxial Wafer-Scale Growth of Monolayer WS₂ on Sapphire by BTBMW-Based MOCVD

[Th-P-14]Patterned Gold-Assisted Exfoliation of Monolayer MoS₂ Utilizing an Ion Mill

[Th-P-17]Quantum Interference in Valley Hall Regime Observed in MoS₂ Hall Bar

[Th-P-19]Electrical Characterization of Sb Contacts to Atomically Thin TMDs and Gate-Defined MoSe₂ Quantum Dots

[Th-P-21]Electrical Characterization of Defects in Monolayer MoS₂ Heterostructure by Ion Beam Irradiation