Presentation Information
[Th-P-13]Epitaxial Wafer-Scale Growth of Monolayer WS2 on Sapphire by BTBMW-Based MOCVD
〇Wei-Chun Chen1, Zih-Siang Jian1,2,3, Wei-Lin Wang1, Hui-Wen Chang1, Yu-Wei Lin1, Wen-Hao Chang1,2,3 (1. National Center for Instrumentation Research, National Institutes of Applied Research (Taiwan), 2. Department of Electrophysics, National Yang Ming Chiao Tung University (Taiwan), 3. Research Center for Critical Issues, Academia Sinica (Taiwan))
Monolayer WS2 was epitaxially grown on sapphire by MOCVD using BTBMW and H2S. Uniform films with >10 μm domains were achieved on 2-inch wafers and scaled to 6-inch substrates. Structural and chemical analyses confirm high purity and epitaxial alignment, with reduced carbon contamination enabling wafer-scale device applications.