Presentation Information
[Th-P-19]Electrical Characterization of Sb Contacts to Atomically Thin TMDs and Gate-Defined MoSe2 Quantum Dots
〇Seungwoo Lee1, Yunsang Noh1, Minjun Park1, Sung Jin An2, Takashi Taniguchi3, Kenji Watanabe4, Minkyung Jung2, Youngwook Kim1 (1. Department of Physics and Chemistry, Daegu Gyeongbuk Inst. of Sci. and Tech. (DGIST) (Korea), 2. DGIST Res. Inst., Daegu Gyeongbuk Institute of Science and Technology (DGIST) (Korea), 3. Res. Center for Materials Nanoarchitectonics, National Inst. for Materials Sci. (Japan), 4. Res. Center for Electronic and Optical Materials, National Inst. for Materials Sci. (Japan))