[Th-P] 2D matrials

[Th-P-21] Electrical Characterization of Defects in Monolayer MoS₂ Heterostructure by Ion Beam Irradiation

〇Madhuri Chennur^1,2, Gregor Hlawacek¹, Ulrich kentsch¹, Jens Zscharschuch^1,2, Artur Erbe^1,2 (1. Helmholtz Zentrum Dresden-Rossendorf (Germany), 2. TU Dresden (Germany))

Defect-induced changes in electrical performance of 2D heterostructures using helium ion irradiation is investigated. hBN encapsulation mitigates substrate and environmental effects. Raman and PL measurements correlate defect density with electronic behavior, highlighting opportunities for controlled defect engineering in devices.