[Th-P1-G] Advanced Epitaxy & Related Technology

2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)

[Th-P1-G-02] Record Hole Mobility Exceeding 7 × 10⁶ cm²V^-1s^-1 in Epitaxial Compressively Strained Germanium Quantum Well on Silicon

〇Maksym MYRONOV¹, Alex Bogan², Sergei Studenikin² (1. The University of Warwick (UK), 2. National Research Council of Canada (Canada))

We report a record hole mobility of 7.15 × 10⁶ cm²V^-1s^-1 at 270 mK in a gated device made from a 30 nm compressively strained Ge quantum well epitaxially grown on 150 mm Si(001). Optimised strain engineering and structural quality establish cs-Ge on silicon as a benchmark group-IV quantum materials platform for advanced quantum research.