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2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)

[Th-P1-G-02]Record Hole Mobility Exceeding 7 × 10⁶ cm²V^-1s^-1 in Epitaxial Compressively Strained Germanium Quantum Well on Silicon

〇Maksym MYRONOV¹, Alex Bogan², Sergei Studenikin² (1. The University of Warwick (UK), 2. National Research Council of Canada, 1200 Montreal Rd., Ottawa, Ontario K1A 0R6, Canada (Canada))

We report a record hole mobility of 7.15 × 10⁶ cm²V^-¹s^-¹ at 270 mK in a gated device made from a 30 nm compressively strained Ge quantum well epitaxially grown on 150 mm Si(001). Optimised strain engineering and structural quality establish cs-Ge on silicon as a benchmark group-IV quantum materials platform for advanced quantum research.

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Presentation Information

[Th-P1-G-02]Record Hole Mobility Exceeding 7 × 106 cm2V-1s-1 in Epitaxial Compressively Strained Germanium Quantum Well on Silicon

[Th-P1-G-02]Record Hole Mobility Exceeding 7 × 10⁶ cm²V^-1s^-1 in Epitaxial Compressively Strained Germanium Quantum Well on Silicon